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MRF9080LR3

Part Number	MRF9080LR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jun 10, 2009
Detailed Description	Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancemen...
Datasheet	MRF9080LR3 PDF File

Overview

Freescale Semiconductor Technical Data MRF9080 Rev.
5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large −signal, common − www.
datasheet4u.
com source amplifier applications in 26 volt base station equipment.
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.
5 dB Efficiency @ P1db: 55% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatne...

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