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MRF18090AR3

Freescale Semiconductor
Part Number MRF18090AR3
Manufacturer Freescale Semiconductor
Description RF Power Field Effect Transistor
Published Jun 10, 2009
Detailed Description Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 7, 5/2006 RF Power Field Effect Transistor N -...
Datasheet PDF File MRF18090AR3 PDF File

MRF18090AR3
MRF18090AR3

Overview
Freescale Semiconductor Technical Data Document Number: MRF18090A Rev.
7, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies from 1.
8 to 2.
0 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for GSM and GSM EDGE cellular radio www.
datasheet4u.
com applications.
• GSM and GSM EDGE Performances, Full Frequency Band Power Gain — 13.
5 dB (Typ) @ 90 Watts CW Efficiency — 52% (Typ) @ 90 Watts CW • Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF18090AR3 1.
80 - 1.
88 GHz, 90 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET CASE 465B - 03, STYLE 1 NI - 880 Table 1.
Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.
5, +65 - 0.
5, +15 250 1.
43 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.
7 Unit °C/W Table 3.
ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc.
, 2006.
All rights reserved.
MRF18090AR3 1 RF Device Data Freescale Semiconductor Table 4.
Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VG...


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