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MRF18090AS

Motorola
Part Number MRF18090AS
Manufacturer Motorola
Description LATERAL N-CHANNEL RF POWER MOSFETS
Published Jan 2, 2006
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090A/D The RF MOSFET Line RF Power Field Effect Tr...
Datasheet PDF File MRF18090AS PDF File

MRF18090AS
MRF18090AS

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.
8 to 2.
0 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in class AB for GSM and EDGE cellular radio applications.
• GSM and EDGE Performances, Full Frequency Band Power Gain — 13.
5 dB (Typ) @ 90 Watts (CW) Efficiency — 52% (Typ) @ 90 Watts (CW) • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters MRF18090A MRF18090AS 1.
80 – 1.
88 GHz, 90 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETS CASE 465B–03, STYLE 1 (NI–880) (MRF18090A) CASE 465C–02, STYLE 1 (NI–880S) (MRF18090AS) MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15, –0.
5 250 1.
43 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.
7 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge.
Reasonable precautions in handling and packaging MOS devices should be observed.
REV 3 MOTOROLA RF DEVICE DATA © Motorola, Inc.
2002 MRF18090A MRF18090AS 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Zero Gate Voltage Drain Current (VDS = 2...


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