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KI4532DY

KEXIN
Part Number KI4532DY
Manufacturer KEXIN
Description MOSFET
Published Jun 20, 2009
Detailed Description www.DataSheet4U.com SMD Type N- and P-Channel 30-V (D-S) MOSFET KI4532DY Transistors IC PIN Configuration Absolute M...
Datasheet PDF File KI4532DY PDF File

KI4532DY
KI4532DY

Overview
www.
DataSheet4U.
com SMD Type N- and P-Channel 30-V (D-S) MOSFET KI4532DY Transistors IC PIN Configuration Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 70 Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient* *Surface Mounted on FR4 Board, t 10 sec.
TJ, Tstg RthJA IDM IS PD Symbol VDS VGS ID N-Channel 30 20 3.
9 3.
1 20 1.
7 2 1.
3 -55 to 150 62.
5 /W P-Channel -30 20 3.
5 2.
8 20 -1.
7 2 1.
3 Unit V V A A A A W W www.
kexin.
com.
cn 1 www.
DataSheet4U.
com SMD Type KI4532DY Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 20 V VDS = 0 V VGS = 20 V VDS = 30V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -30V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 VDS = -30V, VGS = 0 V, TJ = 55 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 10 V -5 V, VGS = -10 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS = -10 V, VGS = -10 V, ID = -2.
5A N Channel VDD = 10 V, RL = 10 ID= 1A, VGEN = 10V, Rg = 6 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Channel VDD = -10 V, RL = 10 Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width tf trr ID= -1 A, VGEN = -10 V, Rg = 6 IF = 1.
7 A, di/dt = 100 A/ IF = -1.
7 A, di/dt = 100 A/ s s N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 15 -15 Min 1 -1 Transistors IC Typ Max Unit V 100 100 1 -1 25 -25 A A 0.
043 0.
065 0.
066 0.
085 0.
075 0.
095 0.
125 7 5 0.
8 -0.
8 9.
8 8.
7 2.
1 1.
9 1.
6 1.
3 9 7 6 9 18 14 6 8 52 50 15 15 18 18 27 27 15 15 80 80 ns 1.
2 -1.
2 15 15 nC 0.
19 S V nA VGS = 10 V, ID = 3.
9A Drain Source On State Resistance* rDS(on) VGS = -10 V, ID = -2.
5A VGS = 4.
5 V, ID = 3.
1A VGS = -4.
5 V, ID = -1.
8A Forward Transconductance* Dio...


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