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MRF18060ALR3

Part Number	MRF18060ALR3
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jul 4, 2009
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field E...
Datasheet	MRF18060ALR3 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF18060A Rev.
9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
Specified for GSM 1805 - 1880 MHz.
• Typical GSM Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain — 13 dB @ 60 Watts Efficiency — 45% @ 60 Watts • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Available with Low Gold Plating Thickness on Leads.
L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant • In Tape and Reel.
R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF18060ALR3 MRF18060ALSR3 1805- 1880 MHz, 60 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF18060ALR3 CASE 465A - 06, STYLE 1 NI - 780S MRF18060ALSR3 Table 1.
Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC ≥ 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.
5, +65 - 0.
5, +15 180 1.
03 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2.
Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.
97 Unit °C/W Table 3.
ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) © Freescale Semiconductor, Inc.
, 2006.
All rights reserved.
MRF18060ALR3 MRF18060ALSR3 1 RF Device Data Freescale Semiconductor Table 4.
Electrical Characteristics (TC = 25°C unless otherwise noted) www...

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