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STW45NM60D

ST Microelectronics
Part Number STW45NM60D
Manufacturer ST Microelectronics
Description Power MOSFETs
Published Jul 7, 2009
Detailed Description www.DataSheet4U.com STW45NM60D N-channel 600 V, 0.09 Ω, 45 A TO-247 FDmesh™ Power MOSFET (with fast diode) Features Typ...
Datasheet PDF File STW45NM60D PDF File

STW45NM60D
STW45NM60D


Overview
www.
DataSheet4U.
com STW45NM60D N-channel 600 V, 0.
09 Ω, 45 A TO-247 FDmesh™ Power MOSFET (with fast diode) Features Type STW45NM60D ■ ■ ■ ■ VDSS (@Tjmax) 650 V RDS(on) < 0.
11 Ω ID 45 A High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 TO-247 Application ■ Switching applications Figure 1.
Internal schematic diagram Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.
It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
$ ' 3 !-V Table 1.
Device summary Marking W45NM60D Package TO-247 Packaging Tube Order code STW45NM60D June 2009 Doc ID 15709 Rev 1 1/12 www.
st.
com 12 www.
DataSheet4U.
com Contents STW45NM60D Contents 1 2 Electrical ratings .
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3 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 4 5 Test circuit .
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8 Package mechanical data .
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9 Revision history .
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11 2/12 Doc ID 15709 Rev 1 www.
DataSheet4U.
com STW45NM60D Electrical ratings 1 Electrical ratings Table 2.
Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 600 ±30 45 28 180 417 3.
33 20 -65 to 150 150 Unit V V A A A W W/°C V/ns °C °C PTOT dv/dt (2) Tstg Tj Peak diode recovery voltage slope Storage temperature Max.
operatin...


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