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STW45NM60

ST Microelectronics
Part Number STW45NM60
Manufacturer ST Microelectronics
Description N-CHANNEL MOSFET
Published May 29, 2006
Detailed Description STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh™ Power MOSFET Features Type VDSS (@Tjmax) RDS(on) ID ...
Datasheet PDF File STW45NM60 PDF File

STW45NM60
STW45NM60

Overview
STW45NM60 N-channel 650V@Tjmax - 0.
09Ω - 45A - TO-247 MDmesh™ Power MOSFET Features Type VDSS (@Tjmax) RDS(on) ID STW45NM60 650V < 0.
11Ω 45A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor’s products.
Application ■ Switching application TO-247 Internal schematic diagram Order code Part number STW45NM60 Marking W45NM60 Package TO-247 Packaging Tube April 2007 Rev 8 1/12 www.
st.
com 12 Contents Contents STW45NM60 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuit .
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8 4 Package mechanical data .
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9 5 Revision history .
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11 2/12 STW45NM60 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS ID ID IDM (1) PTOT dv/dt (2) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Peak diode recovery voltage slope Tstg Storage temperature Tj Max.
operating junct...


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