DatasheetsPDF.com

EIC4450-18

Excelics Semiconductor
Part Number EIC4450-18
Manufacturer Excelics Semiconductor
Description Internally Matched Power FET
Published Aug 4, 2009
Detailed Description www.DataSheet4U.com EIC4450-18 UPDATED: 10/18/2007 4.40-5.00GHz 18-Watt Internally Matched Power FET 2X 0.079 MIN 4X 0...
Datasheet PDF File EIC4450-18 PDF File

EIC4450-18
EIC4450-18


Overview
www.
DataSheet4U.
com EIC4450-18 UPDATED: 10/18/2007 4.
40-5.
00GHz 18-Watt Internally Matched Power FET 2X 0.
079 MIN 4X 0.
102 FEATURES • • • • • • • • 4.
40– 5.
00GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +42.
5 dBm Output Power at 1dB Compression 9.
5 dB Power Gain at 1dB Compression 33% Power Added Efficiency -46 dBc IM3 at Po = 31.
5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH 0.
945 0.
803 Excelics EIC4450-18 0.
024 0.
580 YYWW SN 0.
315 0.
685 0.
010 0.
158 0.
617 0.
004 0.
055 0.
095 0.
055 0.
168 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 4.
40-5.
00GHz VDS = 10 V, IDSQ ≈ 4500mA Gain at 1dB Compression f = 4.
40-5.
00GHz VDS = 10 V, IDSQ ≈ 4500mA Gain Flatness f = 4.
40-5.
00GHz VDS = 10 V, IDSQ ≈ 4500mA Power Added Efficiency at 1dB Compression f = 4.
40-5.
00GHz VDS = 10 V, IDSQ ≈ 4500mA Drain Current at 1dB Compression f = 4.
40-5.
00GHz Caution! ESD sensitive device.
MIN 41.
5 8.
5 TYP 42.
5 9.
5 MAX UNITS dBm dB ±0.
8 33 4800 -43 -46 9000 -2.
5 1.
6 13000 -4.
0 1.
8 o dB % 5500 mA dBc mA V C/W Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 31.
5 dBm S.
C.
L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 5.
00GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 84 mA Note: 1.
Tested with 50 Ohm gate resistor.
2.
S.
C.
L.
= Single Carrier Level.
3.
Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING SYMBOLS PARAMETERS ABSOLUTE 15V -5V 105mA -21.
5mA 41.
5dBm 175C -65C to +175C 83W CONTINUOUS 10V -4V 31.
6mA -5.
2mA @ 3dB Compression 175C -65C to +175C 83W Vds Vgs Igf Igr Pin Tch Tstg Pt Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation Note: 1.
Exceeding any of the above ratings may result in permanent damage.
2.
Exceeding any of the above ratings may reduce...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)