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EIC4450-4

Excelics Semiconductor
Part Number EIC4450-4
Manufacturer Excelics Semiconductor
Description Internally Matched Power FET
Published Aug 4, 2009
Detailed Description www.DataSheet4U.com EIC4450-4 UPDATED 08/21/2007 4.40-5.00 GHz 4-Watt Internally Matched Power FET FEATURES • • • • •...
Datasheet PDF File EIC4450-4 PDF File

EIC4450-4
EIC4450-4

Overview
www.
DataSheet4U.
com EIC4450-4 UPDATED 08/21/2007 4.
40-5.
00 GHz 4-Watt Internally Matched Power FET FEATURES • • • • • • • 4.
40–5.
00GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.
5 dBm Output Power at 1dB Compression 11.
5 dB Power Gain at 1dB Compression 37% Power Added Efficiency -46 dBc IM3 at PO = 25.
5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Caution! ESD sensitive device.
MIN 35.
5 10.
5 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 4.
40-5.
00GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 4.
40-5.
00GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 4.
40-5.
00GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = 4.
40-5.
00GHz Drain Current at 1dB Compression f = 4.
40-5.
00GHz Output 3rd Order Intermodulation Distortion 2 ∆f = 10 MHz 2-Tone Test; Pout = 25.
5 dBm S.
C.
L VDS = 10 V, IDSQ ≈ 65% IDSS f = 5.
00GHz VDS = 3 V, VGS = 0 V Saturated Drain Current Pinch-off Voltage Thermal Resistance 3 TYP 36.
5 11.
5 MAX UNITS dBm dB ±0.
6 37 1200 -43 -46 2000 -2.
5 5.
5 2500 -4.
0 6.
0 o dB % 1500 mA dBc mA V C/W VDS = 3 V, IDS = 20 mA Note: 1.
Tested with 100 Ohm gate resistor.
2.
S.
C.
L.
= Single Carrier Level.
3.
Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS Vds Vgs Igf Igr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15V -5V 48mA -9.
6mA 36dBm 175C -65C to +175C 25W CONTINUOUS2 10V -4V 14mA -2.
4mA @ 3dB Compression 175C -65C to +175C 25W Note: 1.
Exceeding any of the above ratings may result in permanent damage.
2.
Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc.
310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-171...


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