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EIC8596-2

Excelics Semiconductor
Part Number EIC8596-2
Manufacturer Excelics Semiconductor
Description Internally Matched Power FET
Published Aug 4, 2009
Detailed Description www.DataSheet4U.com EIC8596-2 UPDATED 07/25/2007 8.50-9.60 GHz 2-Watt Internally-Matched Power FET FEATURES • • • • •...
Datasheet PDF File EIC8596-2 PDF File

EIC8596-2
EIC8596-2

Overview
www.
DataSheet4U.
com EIC8596-2 UPDATED 07/25/2007 8.
50-9.
60 GHz 2-Watt Internally-Matched Power FET FEATURES • • • • • • • 8.
50-9.
60GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +33.
5 dBm Output Power at 1dB Compression 8.
0 dB Power Gain at 1dB Compression 30% Power Added Efficiency -46 dBc IM3 at PO = 22.
5 dBm SCL 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH Notes: 1.
2.
3.
PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.
50-9.
60GHz VDS = 10 V, IDSQ ≈ 550mA Gain at 1dB Compression f = 8.
50-9.
60GHz VDS = 10 V, IDSQ ≈ 550mA Gain Flatness f = 8.
50-9.
60GHz VDS = 10 V, IDSQ ≈ 550mA Power Added Efficiency at 1dB Compression f = 8.
50-9.
60GHz VDS = 10 V, IDSQ ≈ 550mA Drain Current at 1dB Compression f = 8.
50-9.
60GHz Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 22.
5 dBm S.
C.
L2 VDS = 10 V, IDSQ ≈ 65% IDSS f = 9.
60GHz Saturated Drain Current Pinch-off Voltage Ther...


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