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EIC8596-4

Excelics Semiconductor
Part Number EIC8596-4
Manufacturer Excelics Semiconductor
Description Internally Matched Power FET
Published Aug 4, 2009
Detailed Description www.DataSheet4U.com EIC8596-4 8.50-9.60 GHz 4-Watt Internally-Matched Power FET Issued Date: 06-07-04 FEATURES • • • •...
Datasheet PDF File EIC8596-4 PDF File

EIC8596-4
EIC8596-4

Overview
www.
DataSheet4U.
com EIC8596-4 8.
50-9.
60 GHz 4-Watt Internally-Matched Power FET Issued Date: 06-07-04 FEATURES • • • • • • • • 8.
50 – 9.
60 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.
5 dBm Output Power at 1dB Compression 7.
5 dB Power Gain at 1dB Compression 30% Power Added Efficiency -43 dBc IM3 at Po = 25.
5 dBm SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC8596-4 is a high power, highly linear, single stage MFET amplifier in a flange mount package.
This amplifier features Excelics’ unique MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.
50-9.
60GHz VDS = 10 V, IDSQ ≈ 1100mA Gain at 1dB Compression f = 8.
50-9.
60GHz VDS = 10 V, IDSQ ≈ 1100mA Gain Flatness f = 8.
50-9.
60GHz VDS = 10 V, IDSQ ≈ 1100mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 1100mA f = ...


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