DatasheetsPDF.com

2SD1735

Part Number	2SD1735
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	isc Silicon NPN Power Transistor 2SD1735 DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ...
Datasheet	2SD1735 PDF File

Overview

isc Silicon NPN Power Transistor 2SD1735 DESCRIPTION ·High Voltage ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1.
5 A ICP Collector Current-Peak 5 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.
6 A 60 W 150 ℃ Tstg ...

Similar Datasheet

2SD1700 NPN SILICON TRANSISTOR - NEC
2SD1701 NPN SILICON TRANSISTOR - NEC
2SD1702 NPN Transistor - NEC
2SD1705 Silicon NPN Transistor - Panasonic Semiconductor
2SD1705 NPN Transistor - INCHANGE
2SD1706 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1707 Silicon NPN Transistor - Panasonic Semiconductor
2SD1707 NPN Transistor - INCHANGE
2SD1709 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1710 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)