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FDB12N50TM

Fairchild Semiconductor
Part Number FDB12N50TM
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Oct 14, 2009
Detailed Description FDB12N50TM — N-Channel UniFETTM MOSFET FDB12N50TM N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 m Features • RDS(on) = ...
Datasheet PDF File FDB12N50TM PDF File

FDB12N50TM
FDB12N50TM

Overview
FDB12N50TM — N-Channel UniFETTM MOSFET FDB12N50TM N-Channel UniFETTM MOSFET 500 V, 11.
5 A, 650 m Features • RDS(on) = 550 m (Typ.
) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ.
22 nC) • Low Crss (Typ.
12 pF) • 100% Avalanche Tested • RoHS Compliant Applications • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D G S D2-PAK G MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics S (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Symbol RJC RJA Parameter Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (1 in2 pad of 2 oz copper), Max.
FDB12N50TM 500 ±30 11.
5 6.
9 46 456 11.
5 16.
7 4.
5 165 1.
33 -55 to +150 300 FDB12N50TM 0.
75 62.
5 40 Unit V V A A mJ A mJ V/ns W W/oC oC oC Unit oC/W ©2007 Fairchild Semiconductor Corporation 1 FDB12N50TM Rev.
C1 www.
fairchildsemi.
com FDB12N50TM — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Device Marking FDB12N50 Device FD...


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