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FDB12N50U

Fairchild Semiconductor
Part Number FDB12N50U
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Oct 14, 2009
Detailed Description FDB12N50U N-Channel MOSFET March 2008 FDB12N50U N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features • RDS(on) = 0.65Ω ( T...
Datasheet PDF File FDB12N50U PDF File

FDB12N50U
FDB12N50U

Overview
FDB12N50U N-Channel MOSFET March 2008 FDB12N50U N-Channel MOSFET, FRFET 500V, 10A, 0.
8Ω Features • RDS(on) = 0.
65Ω ( Typ.
)@ VGS = 10V, ID = 5A • Low gate charge ( Typ.
21nC) • Low Crss ( Typ.
11pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant Ultra FRFET tm TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D D G S TO-263AB FDB Series D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS www.
DataSheet4U.
com V GSS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - Derate above 25oC (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) -Continuous (TC = 25oC) Ratings 500 ±30 10 6 40 456 10 16.
5 4.
5 165 1.
33 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC o o ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.
75 62.
5 Units o C/W ©2007 Fairchild Semiconductor Corporation FDB12N50U Rev.
A2 1 www.
fairchildsemi.
com FDB12N50U N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDB12N50U Device FDB12N50UTM_WS Package D2-PAK Reel Siz...


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