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FDMF6704

Fairchild Semiconductor
Part Number FDMF6704
Manufacturer Fairchild Semiconductor
Description High Frequency DrMOS Module
Published Oct 14, 2009
Detailed Description FDMF6704 High Frequency, High Efficiency, Ultra Compact DrMOS Module September 2008 FDMF6704 - XSTM DrMOS Benefits Ult...
Datasheet PDF File FDMF6704 PDF File

FDMF6704
FDMF6704

Overview
FDMF6704 High Frequency, High Efficiency, Ultra Compact DrMOS Module September 2008 FDMF6704 - XSTM DrMOS Benefits Ultra compact size - 6 mm x 6 mm MLP, 44 % space saving compared to conventional MLP 8 mm x 8 mm DrMOS packages.
Fully optimized system efficiency.
Clean voltage waveforms with reduced ringing.
High frequency operation.
The Xtra Small High Performance, High Frequency DrMOS Module General Description tm Compatible with a wide variety of PWM controllers in the market.
Features Ultra- compact thermally enhanced 6 mm x 6 mm MLP package 84 % smaller than conventional discrete solutions.
Synchronous driver plus FET multichip module.
High current handling of 35 A.
Over 93 % peak efficiency.
Tri-State PWM input.
Fairchild's PowerTrench® 5 technology MOSFETs for clean voltage waveforms and reduced ringing.
Optimized for high switching frequencies of up to 1 MHz.
Skip mode SMOD [low side gate turn off] input.
Fairchild SyncFETTM [integrated Schottky diode] technology in the low side MOSFET.
Integrated bootstrap Schottky diode.
Adaptive gate drive timing for shoot-through protection.
Driver output disable function [DISB# pin].
Undervoltage lockout (UVLO).
Fairchild Green Packaging and RoHS compliant.
Low profile SMD package.
www.
DataSheet4U.
com The XSTM DrMOS family is Fairchild’s next-generation fullyoptimized ultra-compact integrated MOSFET plus driver power stage solution for high current, high frequency synchronous buck DC-DC applications.
The FDMF6704 DrMOS integrates a driver IC, two power MOSFETs and a bootstrap Schottky diode into a thermally enhanced compact 6 mm x 6 mm MLP package.
With an integrated approach, the complete switching power stage is optimized with regards to driver and MOSFET dynamic performance, system inductance and RDS(ON).
This greatly reduces the package parasitics and layout challenges associated with conventional discrete solutions.
The driver IC incorporates advanced features such as SMOD.
PWM input is Tri-State compatible.
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