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SPN7510

SYNC POWER
Part Number SPN7510
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Oct 15, 2009
Detailed Description SPN7510 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7510 is the N-Channel logic enhancement mode power field ef...
Datasheet PDF File SPN7510 PDF File

SPN7510
SPN7510

Overview
SPN7510 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN7510 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES ‹ 100V/30A,RDS(ON)= 16mΩ@VGS= 10V ‹ 100V/16A,RDS(ON)= 21mΩ@VGS= 4.
5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ TO-220-3L package design APPLICATIONS z DC/DC Converter z Load Switch SMPS Secondary Side Synchronous Rectifier z PIN CONFIGURATION( TO-220-3L ) www.
DataSheet4U.
com PART MARKING 2009/06/15 Ver.
1 Page 1 SPN7510 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number SPN7510T220TGB Package TO-220-3L Part Marking SPN7510 ※ SPN7510T220TGB : Tube ; Pb – Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter www.
DataSheet4U.
com Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM TA=25℃ TA=70℃ PD EAS TJ TSTG RθJA Typical 100 ±20 Unit Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Power Dissipation V V A A W mJ 72 45 240 130 3.
38 335 Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.
12mH , IAS = 75A , VDD = 80V.
) Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient -55/150 -55/150 2 ℃ ℃ ℃/W 2009/06/15 Ver.
1 Page 2 SPN7510 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total...


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