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SPN4416

SYNC POWER
Part Number SPN4416
Manufacturer SYNC POWER
Description N-Channel MOSFET
Published Oct 15, 2009
Detailed Description SPN4416 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4416 is the N-Channel logic enhancement mode power field e...
Datasheet PDF File SPN4416 PDF File

SPN4416
SPN4416

Overview
SPN4416 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4416 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
FEATURES  20V/10.
0A,RDS(ON)=14mΩ@VGS=4.
5V  20V/ 5.
0A,RDS(ON)=28mΩ@VGS=2.
5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and maximum DC current capability  SOP–8 package design APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter PIN CONFIGURATION(SOP–8) 2020/03/05 Ver.
2 PART MARKING Page 1 SPN4416 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D ORDERING INFORMATION Part Number Package SPN4416S8RGB SOP-8 SPN4416S8TGB SOP-8 ※ SPN4416S8RGB : 13” Tape Reel ; Pb – Free ; Halogen – Free ※ SPN4416S8TGB : Tube ; Pb – Free ; Halogen – Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ Continuous Source Current(Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Description Source Source Source Gate Drain Drain Drain Drain Part Marking SPN4416 SPN4416 Typical 20 ±12 10.
0 7.
6 35 2.
3 2.
5 1.
6 -55/150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W 2020/03/05 Ver.
2 Page 2 SPN4416 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leaka...


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