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FLK057WG

Eudyna Devices
Part Number FLK057WG
Manufacturer Eudyna Devices
Description Ku Band Power GaAs FET
Published Nov 22, 2009
Detailed Description FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Ty...
Datasheet PDF File FLK057WG PDF File

FLK057WG
FLK057WG

Overview
FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.
0dBm(Typ.
) High Gain: G1dB = 7.
0dB(Typ.
) High PAE: ηadd = 32%(Typ.
) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK057WG is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 3.
75 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents should not exceed 4.
4 and -0.
25 mA respectively with gate resistance of 1000Ω.
3.
The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) www.
DataSheet4U.
com Item Symbol IDSS gm Vp VGSO P1dB G1dB ηadd P1dB G1dB ηadd Rth Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS =125mA VDS = 5V, IDS =10mA IGS = -10µA VDS = 10V, IDS = 0.
6 IDSS (Typ.
), f = 14.
5 GHz Min.
-1.
0 -5 26.
0 6.
0 - Limit Typ.
Max.
200 100 -2.
0 27.
0 7.
0 32 27 8 34 20 300 -3.
5 40 Unit mA mS V V dBm dB % dBm dB % °C/W Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Power-added Efficiency Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Power-added Efficiency Thermal Resistance CASE STYLE: WG VDS = 10V, IDS = 0.
6 IDSS (Typ.
), f = 12 GHz Channel to Case - G.
C.
P.
: Gain Compression Point Edition 1.
2 August 1999 1 FLK057WG X, Ku Band Power GaAs FET POWER DERATING CURVE 4 Total Power Dissipation (W) 200 Drain Cu...


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