DatasheetsPDF.com

FLK057XV

Eudyna Devices
Part Number FLK057XV
Manufacturer Eudyna Devices
Description GaAs FET & HEMT Chips
Published Nov 22, 2009
Detailed Description FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) Hi...
Datasheet PDF File FLK057XV PDF File

FLK057XV
FLK057XV

Overview
FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.
0dBm(Typ.
) High Gain: G1dB = 7.
0dB(Typ.
) High PAE: ηadd = 32%(Typ.
) Proven Reliability Source Drain Drain DESCRIPTION The FLK057XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Source Source Gate Gate Rating 15 -5 Unit V V W °C °C Tc = 25°C 3.
75 -65 to +175 175 Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents should not exceed 4.
4 and -0.
2 mA respectively with gate resistance of 1000Ω.
3.
The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item www.
DataSheet4U.
com Symbol IDSS gm Vp VGSO P1dB G1dB ηadd Rth Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 125mA VDS = 5V, IDS = 10mA IGS = -10µA Min.
-1.
0 -5 26 Limit Typ.
Max.
200 100 -2.
0 27 7 32 20 300 -3.
5 40 Unit mA mS V V dBm dB % °C/W Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Power-added Efficiency VDS = 10V IDS ≈ 0.
6IDSS f = 14.
5GHz 6 - Thermal Resistance Channel to Case - Note: RF parameter sample size 10pcs.
criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Edition 1.
3 July 1999 1 FLK057XV GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs.
DRAIN-SOURCE VO...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)