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RJK2006DPF

Renesas Technology
Part Number RJK2006DPF
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Dec 1, 2009
Detailed Description RJK2006DPJ, RJK2006DPE, RJK2006DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G0512-0100 Rev.1.00 Jan.14....
Datasheet PDF File RJK2006DPF PDF File

RJK2006DPF
RJK2006DPF

Overview
RJK2006DPJ, RJK2006DPE, RJK2006DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G0512-0100 Rev.
1.
00 Jan.
14.
2005 Features • Low on-resistance • Low leakage current • High speed switching Outline LDPAK D 4 4 4 G 1 1 2 3 1 S 3 RJK2006DPE 2 3 RJK2006DPF RJK2006DPJ 2 1.
Gate 2.
Drain 3.
Source 4.
Drain Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current www.
DataSheet4U.
com Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 200 ±30 40 100 40 100 27 48.
6 100 1.
25 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C Rev.
1.
00, Jan.
14.
2005, page 1 of 4 RJK2006DPJ, RJK2006DPE, RJK2006DPF Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4.
Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 200 — — 3.
0 15 — — — — — — — — — — — — — — Typ — — — — 26 0.
052 1800 330 43 30 180 85 100 43 11 20 1.
0 150 0.
8 Max — 1 ±0.
1 4.
5 — 0.
059 — — — — — — — — — — 1.
5 — — Unit V µA µA V S Ω pF pF pF ns ns ns ns nC nC nC V ns µC Test conditions ID = 10 mA, VGS = 0 VDS = 200 V, VGS = 0 VGS = ±30 V, V...


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