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SG50N06D3S

Sirectifier Semiconductors
Part Number SG50N06D3S
Manufacturer Sirectifier Semiconductors
Description (SG50N06D2S / SG50N06D3S) Discrete IGBTs
Published Dec 4, 2009
Detailed Description SG50N06D2S, SG50N06D3S Discrete IGBTs Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter...
Datasheet PDF File SG50N06D3S PDF File

SG50N06D3S
SG50N06D3S


Overview
SG50N06D2S, SG50N06D3S Discrete IGBTs Dimensions SOT-227(ISOTOP) Dim.
A B C D E F G H J K L M N O P Q R S T U Millimeter Min.
Max.
31.
50 7.
80 4.
09 4.
09 4.
09 14.
91 30.
12 37.
80 11.
68 8.
92 0.
76 12.
60 25.
15 1.
98 4.
95 26.
54 3.
94 4.
72 24.
59 -0.
05 3.
30 0.
780 31.
88 8.
20 4.
29 4.
29 4.
29 15.
11 30.
30 38.
20 12.
22 9.
60 0.
84 12.
85 25.
42 2.
13 5.
97 26.
90 4.
42 4.
85 25.
07 0.
1 4.
57 0.
830 Inches Min.
Max.
1.
240 0.
307 0.
161 0.
161 0.
161 0.
587 1.
186 1.
489 0.
460 0.
351 0.
030 0.
496 0.
990 0.
078 0.
195 1.
045 0.
155 0.
186 0.
968 -0.
002 0.
130 19.
81 1.
255 0.
323 0.
169 0.
169 0.
169 0.
595 1.
193 1.
505 0.
481 0.
378 0.
033 0.
506 1.
001 0.
084 0.
235 1.
059 0.
174 0.
191 0.
987 0.
004 0.
180 21.
08 SG50N06D2S SG50N06D3S V W Symbol o o Test Conditions Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM=100 @ 0.
8VCES 250 600 60 600 150 300 -40…+150 150 -40…+150 1.
5/13 1.
5/13 30 o Unit V V A A W V A A W o C VCES TJ=25 C to 150 C VCGR TJ=25oC to 150oC; RGE=1M VGES Continuous VGEM Transient IC25 TC=25oC IC90 TC=90oC ICM TC=25oC; 1 ms SSOA VGE=15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load; L=30uH PC TC=25oC VRRM IFAVM TC=70oC; rectangular; d=50% IFRM tp 10ms; pulse width limited by TJ PD TC=25oC Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s www.
DataSheet4U.
com TJ TJM Tstg Md Mounting torque Terminal connection torque(M4) Weight CASE DIODE IGBT A Nm/Ib.
in.
g (TJ=25 C, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.
8VCES; VGE=0V; TJ=25 C TJ=125 C o o Characteristic Values min.
typ.
max.
600 2.
5 5.
0 200 1 ±100 2.
5 Unit V V uA mA nA V VCE=0V; VGE=±20V IC=IC90; VGE=15V SG50N06D2S, SG50N06D3S Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min.
gts IC=IC90; VCE=10V Pulse test, t Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi www.
DataSheet4U.
com Unit typ.
50 max.
S 35 2% 300us, duty cycle 4100 VCE=25V; VGE=0V; f=1MHz 290 5...


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