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SG50N06DS

Sirectifier Semiconductors
Part Number SG50N06DS
Manufacturer Sirectifier Semiconductors
Description Discrete IGBTs
Published Dec 4, 2009
Detailed Description SG50N06S, SG50N06DS Discrete IGBTs E C Dimensions SOT-227(ISOTOP) Dim. A B C D Millimeter Min. Max. 31.50 7.80 4.09 4.09...
Datasheet PDF File SG50N06DS PDF File

SG50N06DS
SG50N06DS

Overview
SG50N06S, SG50N06DS Discrete IGBTs E C Dimensions SOT-227(ISOTOP) Dim.
A B C D Millimeter Min.
Max.
31.
50 7.
80 4.
09 4.
09 4.
09 14.
91 30.
12 37.
80 11.
68 8.
92 0.
76 12.
60 25.
15 1.
98 4.
95 26.
54 3.
94 4.
72 24.
59 -0.
05 3.
30 0.
780 31.
88 8.
20 4.
29 4.
29 4.
29 15.
11 30.
30 38.
20 12.
22 9.
60 0.
84 12.
85 25.
42 2.
13 5.
97 26.
90 4.
42 4.
85 25.
07 0.
1 4.
57 0.
830 Inches Min.
Max.
1.
240 0.
307 0.
161 0.
161 0.
161 0.
587 1.
186 1.
489 0.
460 0.
351 0.
030 0.
496 0.
990 0.
078 0.
195 1.
045 0.
155 0.
186 0.
968 -0.
002 0.
130 19.
81 1.
255 0.
323 0.
169 0.
169 0.
169 0.
595 1.
193 1.
505 0.
481 0.
378 0.
033 0.
506 1.
001 0.
084 0.
235 1.
059 0.
174 0.
191 0.
987 0.
004 0.
180 21.
08 G=Gate, C=Collector, E=Emitter E G E F G H J K L M N O P Q R S T U V W SG50N06S Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA SG50N06DS Test Conditions Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM=100 @ 0.
8 VCES 250 -55.
.
.
+150 150 -55.
.
.
+150 Unit V V TJ=25oC to 150oC TJ=25oC to 150oC; RGE=1 M ; Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms A A W o VGE=15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load, L=30uH PC TC=25oC TJ TJM Tstg www.
DataSheet4U.
com Md Mounting C torque Terminal connection torque(M4) 1.
5/13 1.
5/13 30 300 Nm/Ib.
in.
g o Weight Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s C (TJ=25oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.
8VCES; VGE=0V; TJ=125 C o Characteristic Values min.
600 2.
5 5 200 1 ±100 2.
5 typ.
max.
Unit V V uA mA nA V VCE=0V; VGE=±20V IC=IC90; VGE=15V SG50N06S, SG50N06DS Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min.
gts IC=IC90; VCE=10V Pulse test, t Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff www.
DataSheet4U.
com Unit typ.
35 max.
S 25 2% 300us, duty cycle 4000 VCE=25V; VGE=0V; f=1MHz 340 100 110 IC=IC90; VGE=15V; VCE=0.
5VCES o pF 180 50 100 ns ns ns ns mJ ns ns mJ ns ns mJ 0.
50 K/W K...


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