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FLM1011-12F

Eudyna Devices
Part Number FLM1011-12F
Manufacturer Eudyna Devices
Description Ku-Band Internally Matched FET
Published Dec 24, 2009
Detailed Description FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm (Typ.) High Gain:...
Datasheet PDF File FLM1011-12F PDF File

FLM1011-12F
FLM1011-12F


Overview
FLM1011-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.
5dBm (Typ.
) High Gain: G1dB = 6.
0dB (Typ.
) High PAE: ηadd = 25% (Typ.
) Low IM3 = -45dBc@Po = 29.
5dBm Broad Band: 10.
7 ~ 11.
7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM1011-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 57.
6 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1.
The drain-source operating voltage (VDS) should not exceed 10 volts.
2.
The forward and reverse gate currents should not exceed 32.
0 and -5.
6 mA respectively with gate resistance of 50Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item www.
DataSheet4U.
com Saturated Drain Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 3600mA VDS = 5V, IDS = 300mA IGS = -340µA VDS = 10V f = 10.
7 ~ 11.
7 GHz IDS = 0.
6 IDSS(Typ.
) ZS = ZL = 50Ω f = 11.
7GHz, ∆f = 10MHz 2-Tone Test Pout = 29.
5 dBm S.
C.
L.
Channel to Case 10V x Idsr x Rth Min.
-0.
5 -5 39.
5 5.
0 -42 - Limit Typ.
Max.
6000 5000 -1.
5 40.
5 6.
0 3600 25 -45 2.
3 9000 -3.
0 4500 ±0.
6 2.
6 80 Unit mA mS V V dBm dB mA % dB dBc °C/W °C Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Drain Current Power-Added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IB G.
C.
P.
: Gain Compression Point Edition 1.
3 August 2004 1 FLM1011-12F X,...


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