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FLM1011-15F

SUMITOMO
Part Number FLM1011-15F
Manufacturer SUMITOMO
Description X / Ku-Band Internally Matched FET
Published Jul 14, 2014
Detailed Description FLM1011-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ....
Datasheet PDF File FLM1011-15F PDF File

FLM1011-15F
FLM1011-15F

Overview
FLM1011-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.
0dBm(Typ.
) ・High Gain: G1dB=7.
0dB(Typ.
) ・High PAE: ηadd=31%(Typ.
) ・Broad Band: 10.
7~11.
7GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM1011-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 57.
7 -65 to +175 175 o Unit V V W C C o RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25°C) Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR RG=50Ω RG=50Ω Condition Limit Unit V mA mA ≤10 ≤16.
7 ≥-3.
62 Limit Typ.
7.
2 4500 -1.
5 42.
0 7.
0 4.
0 31 2.
3 -45 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G Rth ∆Tch IM3 Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=4.
55A VDS=5V, IDS=300mA IGS=-300uA VDS=10V f=10.
7 - 11.
7 GHz IDS=0.
5Idss (typ) Zs=ZL=50Ω Min.
-0.
5 -5.
0 41.
0 6.
0 -42 Max.
10.
8 -3.
0 5.
0 1.
2 2.
6 100 - Unit A mS V V dBm dB A % dB o Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise 3rd Order Intermodulation Distortion Channel to Case 10V x Idsr x Rth f=11.
7GHz, ∆ f=10MHz, 2-Tone Test Pout=30.
0dBm S.
C.
L.
C/W o C dBc CASE STYLE: IB ESD Edition 1.
2 September 2004 G.
C.
P.
:Gain Compression Point, S.
C.
L.
:Single Carrier Level Class III 2000V　~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.
5kΩ) 1 FLM1011-15F X,Ku-Band Internally Matched FET POWER DERATING CURVE 60 Output Power [dBm] Total Power Dissipation [W] OUTPUT POWER , POWER ADDED EFFICIENCY v.
s.
INPUT POWER Vds=10V, Ids=0.
5Idss Freq=11.
2GHz ...


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