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SPA11N60CFD

Infineon Technologies
Part Number SPA11N60CFD
Manufacturer Infineon Technologies
Description CoolMOS Power Transistor
Published Jan 26, 2010
Detailed Description SPA11N60CFD CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Intrinsic fast-recovery b...
Datasheet PDF File SPA11N60CFD PDF File

SPA11N60CFD
SPA11N60CFD

Overview
SPA11N60CFD CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified according to JEDEC0) for target applications Product Summary V DS R DS(on),max I D1) 600 0.
44 11 V Ω A PG-TO220-3-31 Type SPA11N60CFD Package TO-220-3-31 Ordering Code SP000216317 Marking 11N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current 1) www.
DataSheet4U.
com Symbol Conditions ID T C=25 °C T C=100 °C I D,pulse E AS E AR I AR dv /dt dv /dt di /dt V GS I D=11 A, V DS=480 V, T j=125 °C I S=11 A, V DS=480 V, T j=125 °C static AC (f >1 Hz) T C=25 °C I D=5.
5 A, V DD=50 V I D=11 A, V DD=50 V Value 11 7 28 340 0.
6 11 80 40 600 ±20 ±30 33 -55 .
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150 Unit A Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive2),3) Avalan...


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