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KTC3532T

KEC
Part Number KTC3532T
Manufacturer KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Published Feb 5, 2010
Detailed Description SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. KTC3532T EPITAXIAL PLANAR NPN TRAN...
Datasheet PDF File KTC3532T PDF File

KTC3532T
KTC3532T


Overview
SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION.
KTC3532T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES ᴌAdoption of MBIT Processes.
ᴌLarge Current Capacitance.
ᴌLow Collector-to-Emitter Saturation Voltage.
A F G K B DIM A B 2 3 C D MILLIMETERS _ 0.
2 2.
9 + 1.
6+0.
2/-0.
1 _ 0.
05 0.
70 + _ 0.
1 0.
4 + 2.
8+0.
2/-0.
3 _ 0.
2 1.
9 + 0.
95 _ 0.
05 0.
16 + 0.
00-0.
10 0.
25+0.
25/-0.
15 0.
60 0.
55 D ᴌUltrasmall Package Facilitates Miniaturization in end Products.
ᴌHigh Allowable Power Dissipation.
ᴌComplementary to KTA1532T C L G ᴌHigh-Speed Switching.
1 E F G H I J K L H J MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg RATING 20 20 5 1.
5 3 300 0.
9 150 -55ᴕ150 UNIT V V V A A mA W ᴱ ᴱ J 1.
EMITTER 2.
BASE 3.
COLLECTOR Marking Lot No.
Type Name * Package mounted on a ceramic board (600Ὅᴧ0.
8Ὂ) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) www.
DataSheet4U.
com CHARACTERISTIC SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=12V, IE=0 VEB=4V, IC=0 IC=10Ọ A, IE=0 IC=1mA, IB=0 IE=10Ọ A, IC=0 IC=750mA, IB=15mA IC=750mA, IB=15mA VCE=2V, IC=100mA VCE=2V, IC=300mA VCB=10V, f=1MHz PW=20µs DC < = 1% IB1 I B2 RB 50Ω VR 220µF 470µF VCC =5V RL MIN.
20 20 5 200 - Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time OUTPUT Storage Time tstg Fall Time tf V BE =-5V 20IB1=-20IB2=IC =750mA 2001.
6.
26 Revision No : 0 I TSM HB TYP.
130 0.
85 210 20 40 MAX.
0.
1 0.
1 200 1.
2 560 MHz pF UNIT Ọ A Ọ A V V V mV V - 180 - nS - 20 - 1...



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