DatasheetsPDF.com

KTC3536T

KEC
Part Number KTC3536T
Manufacturer KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Published Feb 5, 2010
Detailed Description SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. KTC3536T EPITAXIAL PLA...
Datasheet PDF File KTC3536T PDF File

KTC3536T
KTC3536T


Overview
SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION.
KTC3536T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES ᴌAdoption of MBIT Processes.
ᴌHigh Current Capacitance.
ᴌLow Collector-to-Emitter Saturation Voltage.
A F G K B DIM A B 2 3 C D MILLIMETERS _ 0.
2 2.
9 + 1.
6+0.
2/-0.
1 _ 0.
05 0.
70 + _ 0.
1 0.
4 + 2.
8+0.
2/-0.
3 _ 0.
2 1.
9 + 0.
95 _ 0.
05 0.
16 + 0.
00-0.
10 0.
25+0.
25/-0.
15 0.
60 0.
55 D ᴌUltrasmall-Sized Package permitting applied sets to be made small and slim.
ᴌHigh Allowable Power Dissipation.
ᴌComplementary to KTA1536T.
C L G ᴌHigh Speed Switching.
1 E F G H I J K L H J MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg RATING 20 20 5 5 8 1.
2 0.
9 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ J 1.
EMITTER 2.
BASE 3.
COLLECTOR Marking Lot No.
Type Name * Package mounted on a ceramic board (600Ὅᴧ0.
8Ὂ) ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) www.
DataSheet4U.
com CHARACTERISTIC SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=12V, IE=0 VEB=4V, IC=0 IC=10Ọ A, IE=0 IC=1mA, IB=0 IE=10Ọ A, IC=0 IC=3A, IB=60mA IC=3A, IB=60mA VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, f=1MHz PW=20µs DC < = 1% IB1 I B2 RB 50Ω VR 100µF 470µF VCC =5V RL OUTPUT MIN.
20 20 5 200 - Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time Storage Time tstg Fall Time tf V BE =-5V 20IB1=-20IB2=IC =3A 2001.
6.
30 Revision No : 0 I TSM HE TYP.
200 0.
85 160 46 32 MAX.
0.
1 0.
1 300 1.
2 560 MHz pF UNIT Ọ A Ọ A V V V mV V - 250 - nS - ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)