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STH270N4F3-6

STMicroelectronics
Part Number STH270N4F3-6
Manufacturer STMicroelectronics
Description Power MOSFET
Published Feb 7, 2010
Detailed Description STH270N4F3-6 N-channel 40 V, 1.40 mΩ , 180 A, H2PAK STripFET™ III Power MOSFET Features Type STH270N4F3-6 VDSS 40 V RDS(...
Datasheet PDF File STH270N4F3-6 PDF File

STH270N4F3-6
STH270N4F3-6

Overview
STH270N4F3-6 N-channel 40 V, 1.
40 mΩ , 180 A, H2PAK STripFET™ III Power MOSFET Features Type STH270N4F3-6 VDSS 40 V RDS(on) < 1.
7 mΩ ID (1) 180 A TAB 1.
Current limited by package ■ ■ Conduction losses reduced Low profile, very low parasitic inductance, high current package 1 H2PAK-6l 7 Applications ■ Switching application – Automotive Figure 1.
Internal schematic diagram Description This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance.
www.
DataSheet4U.
com Table 1.
Device summary Order code Marking 270N4F3 Package H 2PAK Packaging Tape and reel STH270N4F3-6 January 2010 Doc ID 16957 Rev 1 1/13 www.
st.
com 13 Contents STH270N4F3-6 Contents 1 2 Electrical ratings .
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3 Electrical characteristics .
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4 2.
1 Electrical characteristics .
6 3 4 5 6 Test circuits .
8 Package mechanical data .
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9 Packaging mechanical data .
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11 Revision history .
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12 www.
DataSheet4U.
com 2/13 Doc ID 16957 Rev 1 STH270N4F3-6 Electrical ratings 1 Electrical ratings Table 2.
Symbol VDS VGS ID (1) ID IDM (1) PTOT (2) Absolute maximum ratings Parameter Drain-source voltage (vgs = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Derating factor Value 40 ± 20 180 180 720 300 2 1000 -55 to 175 Operating junction temperature Unit V V A A A W W/°C mJ °C EAS (3) Tstg Tj Single pulse avalan...


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