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STH270N4F3-2

STMicroelectronics
Part Number STH270N4F3-2
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Nov 8, 2015
Detailed Description STH270N4F3-2 N-channel 40 V, 1.4 mΩ typ., 180 A STripFET™ F3 Power MOSFET in H2PAK-2 package Datasheet − production dat...
Datasheet PDF File STH270N4F3-2 PDF File

STH270N4F3-2
STH270N4F3-2

Overview
STH270N4F3-2 N-channel 40 V, 1.
4 mΩ typ.
, 180 A STripFET™ F3 Power MOSFET in H2PAK-2 package Datasheet − production data Features TAB 2 3 1 H2PAK-2 Figure 1.
Internal schematic diagram ' 7$% Order codes STH270N4F3-2 VDS 40 V RDS(on) max ID 1.
7 mΩ 180 A • Conduction losses reduced • Low profile, very low parasitic inductance, high current package Applications • Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology.
It is designed to minimize on-resistance and gate charge to provide superior switching performance.
*  6  *,3')65 Order code STH270N4F3-2 Table 1.
Device summary Marking Package 270N4F3 H2PAK-2 Packaging Tape and reel May 2015 This is information on a product in full production.
DocID16957 Rev 3 1/16 www.
st.
com 16 Contents Contents STH270N4F3-2 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuits .
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8 4 Package information .
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9 4.
1 H2PAK-2 package information .
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10 5 Packing information .
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13 6 Revision history .
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15 2/16 DocID16957 Rev 3 STH270N4F3-2 1 Electrical ratings Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter Value VDS Drain-source voltage VGS ID (1) ID (1) IDM (2) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuo...


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