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2SD965

Dc Components
Part Number 2SD965
Manufacturer Dc Components
Description NPN Transistor
Published Feb 17, 2010
Detailed Description DC COMPONENTS CO., LTD. R 2SD965 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR ...
Datasheet PDF File 2SD965 PDF File

2SD965
2SD965

Overview
DC COMPONENTS CO.
, LTD.
R 2SD965 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use as AF output amplifier and flash unit.
TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .
190(4.
83) .
170(4.
33) .
190(4.
83) .
170(4.
33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 40 20 7 5 750 +150 -55 to +150 Unit V V V A mW o o .
500 Min (12.
70) .
022(0.
56) .
014(0.
36) .
100 Typ (2.
54) .
148(3.
76) .
132(3.
36) .
022(0.
56) .
014(0.
36) .
050 Typ (1.
27) 3 2 1 .
050 o o 5 Typ.
5 Typ.
(1.
27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min 40 20 7 230 150 2% Typ 0.
35 150 - Max 0.
1 0.
1 1 800 50 Unit V V V µA µA V MHz pF Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=10V, IE=0 VEB=7V, IC=0 IC=3A, IB=100mA IC=0.
5A, VCE=2V IC=2A, VCE=2V IE=50mA, VCE=6V VCB=20V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain (1) VCE(sat) hFE1 hFE2 fT Cob Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width 380µs, Duty Cycle Classification of hFE1 Rank Range Q 230~380 R 340~600 S 560~800 ...


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