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STL35NF10

STMicroelectronics
Part Number STL35NF10
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published Mar 1, 2010
Detailed Description www.DataSheet4U.com STL35NF10 N-CHANNEL 100V - 0.025Ω - 35A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET PRELIMINARY DAT...
Datasheet PDF File STL35NF10 PDF File

STL35NF10
STL35NF10

Overview
www.
DataSheet4U.
com STL35NF10 N-CHANNEL 100V - 0.
025Ω - 35A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET PRELIMINARY DATA TYPE STL35NF10 s s s VDSS 100 V RDS(on) < 0.
030 Ω ID 35 A TYPICAL RDS(on) = 0.
025Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STripFET™” technology.
The resulting transistor shows extremely low onresistance and minimal gate charge.
The new PowerFLAT™ package allows a significant reduction in board space without compromising performance.
PowerFLAT™(6x5) (Chip Scale Package) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH EFFICIENCY ISOLATED DC/DC CONVETERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID IDM (q) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max.
Operating Junction Temperature Value 100 100 ± 20 35 22 140 80 0.
64 135 –65 to 150 –55 to 150 Unit V V V A A A W W/°C mJ °C °C (q) Pulse width limited by safe operating area (1) Starting Tj = 25°C, ID = 35A, VDD = 50V August 2001 1/6 STL35NF10 www.
DataSheet4U.
com THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.
56 50 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20V Min.
100 1 10 ±100 Typ.
Max.
Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250µA VGS = 10 V, ID = 17.
5 A Min.
2 Typ.
2.
8 0...


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