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MMBTSC2411

SEMTECH ELECTRONICS
Part Number MMBTSC2411
Manufacturer SEMTECH ELECTRONICS
Description NPN Transistor
Published Mar 4, 2010
Detailed Description MMBTSC2411 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups P, Q and R according t...
Datasheet PDF File MMBTSC2411 PDF File

MMBTSC2411
MMBTSC2411

Overview
MMBTSC2411 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups P, Q and R according to its DC current gain.
www.
DataSheet4U.
com Absolute Maximum Ratings (T a = 25 OC) Symbol VCBO VCEO VEBO IC Ptot Tj TS SOT-23 Plastic Package V al ue 40 32 5 500 200 150 -55 to +150 Unit V V V mA mW O Parameter C o ll e ct o r B as e V o lt a g e Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at T a =25 O C C O C Symbol P Q R hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT Cob Min.
82 120 180 40 32 5 Typ.
250 6 Max.
180 270 390 1 1 0.
4 Unit V V V µA µA V MHz pF Parameter DC Current Gain at VCE = 3 V, IC = 100 mA Collector Base Breakdown Voltage at IC= 100 µA Collector Emitter Breakdown Voltage at IC= 1 mA Emitter Base Breakdown Voltage at IE= 100 µA Collector Cutoff Current at VCB= 20 V Emitter Cutoff Current at VEB = 4 V Collector Saturation Volta...


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