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MMBTSC2412


Part Number MMBTSC2412
Manufacturer SEMTECH ELECTRONICS
Title NPN Transistor
Description MMBTSC2412 NPN Silicon Epitaxial Planar Transistor for general purpose applications. The transistor is subdivided into three groups Q, R and S. ac...
Features oltage at IC=50µA Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=50µA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=7V Collector Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=12V, -IE=2mA, f=100MHz Output Capacitance at VC...

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MMBTSC2411 : MMBTSC2411 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups P, Q and R according to its DC current gain. www.DataSheet4U.com Absolute Maximum Ratings (T a = 25 OC) Symbol VCBO VCEO VEBO IC Ptot Tj TS SOT-23 Plastic Package V al ue 40 32 5 500 200 150 -55 to +150 Unit V V V mA mW O Parameter C o ll e ct o r B as e V o lt a g e Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at T a =25 O C C O C Symbol P Q R hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT Cob Min. 82 120 180 40 32 5 Typ. 250 6 Max. 180 270 390 1 1 0.4 Unit V V V µA µA V M.

MMBTSC2413 : MMBTSC2413 NPN Silicon Epitaxial Planar Transistor High frequency amplifier transistor. www.DataSheet4U.com SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 40 25 5 50 200 150 - 55 to + 150 Unit V V V mA mW O C C O Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Collector Base Cutoff Current at VCB = 24 V Emitter Base Cutoff Current at VEB = 3 V Collector Base Breakdown Voltage at IC = 50 µA Collector Emitter Breakdown Voltage at IC = 1.




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