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MTB12N04J3

Cystech Electonics
Part Number MTB12N04J3
Manufacturer Cystech Electonics
Description N -Channel Enhancement Mode Power MOSFET
Published Mar 9, 2010
Detailed Description CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET www.DataSheet4U.com Spec. No. : C707J3 Issued Date :...
Datasheet PDF File MTB12N04J3 PDF File

MTB12N04J3
MTB12N04J3

Overview
CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET www.
DataSheet4U.
com Spec.
No.
: C707J3 Issued Date : 2009.
04.
23 Revised Date : Page No.
: 1/7 MTB12N04J3 Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) 40V 30A 12mΩ Equivalent Circuit MTB12N04J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.
1mH, ID=20A, RG=25Ω Repetitive Avalanche Energy @ L=0.
05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1.
Pulse width limited by maximum junction temperature *2.
Duty cycle ≤ 1% MTB12N04J3 VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg 40 ±20 30 20 120 20 20 10 50 26 -55~+175 V A mJ W °C CYStek Product Specification CYStech Electronics Corp.
Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a www.
DataSheet4U.
com Spec.
No.
: C707J3 Issued Date : 2009.
04.
23 Revised Date : Page No.
: 2/7 Value 3 75 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS ID(ON) RDS(ON) *1 *1 Min.
40 1.
5 30 - Typ.
1.
8 25 10.
8 15.
5 22 3.
6 7 3 11 16 6 1700 180 106 2 60 42 Max.
3.
2 ±100 1 25 12 20 25 100 1.
3 - Unit V V S nA μA μA A mΩ mΩ Test Conditions VGS=0, ID=250μA VDS =VGS, ID=250μA VDS =5V, ID=20A VGS=±20, VDS=0 VDS =32V, VGS =0 VDS =30V, VGS =0, Tj=125°C VDS =10V, VGS =10V VGS =10V, ID=20A VGS =7V, ID=15A *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr nC ID=20A, VDS=20V, VGS=10V VDS=20V, ID=1A, VGS=10V, RG=6Ω ns pF Ω...


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