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MTB12N04J3

Cystech Electonics
Part Number MTB12N04J3
Manufacturer Cystech Electonics
Description N -Channel Enhancement Mode Power MOSFET
Published Mar 9, 2010
Detailed Description CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET www.DataSheet4U.com Spec. No. : C707J3 Issued Date :...
Datasheet PDF File MTB12N04J3 PDF File

MTB12N04J3
MTB12N04J3

Overview
CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET www.
DataSheet4U.
com Spec.
No.
: C707J3 Issued Date : 2009.
04.
23 Revised Date : Page No.
: 1/7 MTB12N04J3 Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) 40V 30A 12mΩ Equivalent Circuit MTB12N04J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.
1mH, ID=20A, RG=25Ω Repetitive Avalanche Energy @ L=0.
05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1.
Pulse width limited by maximum junction temperature *2.
Duty cycle ≤ 1% MTB12N04J3 VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg 40 ±20 30 20 120 20 20 10 50 26 -55~+...


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