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MCH5810

Sanyo Semicon Device
Part Number MCH5810
Manufacturer Sanyo Semicon Device
Description DC / DC Converter Applications
Published Mar 20, 2010
Detailed Description Ordering number : ENN8194 MCH5810 www.DataSheet4U.com MCH5810 Features • • MOSFET : P-Channel Silicon MOSFET SBD : Sc...
Datasheet PDF File MCH5810 PDF File

MCH5810
MCH5810

Overview
Ordering number : ENN8194 MCH5810 www.
DataSheet4U.
com MCH5810 Features • • MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications • Composite type with a P-Channel Sillicon MOSFET (MCH3335) and a Schottky Barrier Diode (SBS011) contained in one package facilitating high-density mounting.
[MOSFET] • Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
[SBD] • Short reverse recovery time.
• Low forward voltage.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage(*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 150 3 --55 to +125 --55 to +125 V V mA A °C °C VDSS VGSS ID IDP PD Tch Tstg PW≤10µs...


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