DatasheetsPDF.com

APT100GT60JRDQ4

Microsemi Corporation
Part Number APT100GT60JRDQ4
Manufacturer Microsemi Corporation
Description Thunderbolt IGBT
Published Mar 30, 2010
Detailed Description www.DataSheet4U.com APT100GT60JRDQ4 600V, 100A, VCE(ON) = 2.1V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a ne...
Datasheet PDF File APT100GT60JRDQ4 PDF File

APT100GT60JRDQ4
APT100GT60JRDQ4

Overview
www.
DataSheet4U.
com APT100GT60JRDQ4 600V, 100A, VCE(ON) = 2.
1V Typical Thunderbolt IGBT® The Thunderbolt IGBT® is a new generation of high voltage power IGBTs.
Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
E G C E Features • Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • RoHS Compliant • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current S ISOTOP ® OT 22 7 "UL Recognized" file # E145592 Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range All Ratings: TC = 25°C unless otherwise specified.
Ratings 600 Volts ±30 148 80 300 300A @ 600V 500 -55 to 150 Watts °C Amps Unit Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) Gate Threshold Voltage (VCE = VGE, IC = 1.
5mA, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±30V) Min 600 3 1.
7 - Typ 4 2.
1 2.
5 - Max 5 Unit Volts 2.
5 50 μA 300 nA 052-6294 Rev B 10 - 2008 ICES IGES 1500 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.
microsemi.
com Dynamic Characteristic Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacit...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)