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APT100GT60JRDL

Microsemi Corporation
Part Number APT100GT60JRDL
Manufacturer Microsemi Corporation
Description Resonant Mode Combi IGBT
Published Mar 30, 2010
Detailed Description www.DataSheet4U.com APT100GT60JRDL 600V, 100A, VCE(ON) = 2.1V Typical Resonant Mode Combi IGBT® The Thunderbolt IGBT® ...
Datasheet PDF File APT100GT60JRDL PDF File

APT100GT60JRDL
APT100GT60JRDL

Overview
www.
DataSheet4U.
com APT100GT60JRDL 600V, 100A, VCE(ON) = 2.
1V Typical Resonant Mode Combi IGBT® The Thunderbolt IGBT® used in this Resonant Mode Combi is a new generation of high voltage power IGBTs.
Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
E E G C 7 22 T SO "UL Recognized" file # E145592 Features • Low Forward Voltage Drop • Low Tail Current • Integrated Gate Resistor Low EMI, High Reliability • Ultra soft recovery diode • RBSOA and SCSOA Rated • High Frequency Switching to 50KHz • Ultra Low Leakage Current Typical Applications ISOTOP ® • ZVS Phase Shifted Bridge • Resonant Mode Switching • Phase Shifted Bridge • Welding • Induction heating • High Frequency SMPS G E C • Low forward Diode Voltage (VF) • RoHS Compliant Maximum Ratings Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range All Ratings: TC = 25°C unless otherwise specified.
Ratings 600 Volts ±30 148 80 300 300A @ 600V 500 -55 to 150 Watts °C Amps Unit Static Electrical Characteristics Symbol Characteristic / Test Conditions V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) Gate Threshold Voltage (VCE = VGE, IC = 2.
0mA, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 25°C) Collector Emitter On Voltage (VGE = 15V, IC = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±30V) Min 600 3 1.
7 - Typ 4 2.
1 2.
5 - Max 5 Unit Volts 2.
5 75 μA 300 nA 052-6358 Rev C 6 - 2009 ICES IGES 1500 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedu...


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