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D1275A

Panasonic Semiconductor
Part Number D1275A
Manufacturer Panasonic Semiconductor
Description 2SD1275A
Published Apr 7, 2010
Detailed Description Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington For power amplification Complem...
Datasheet PDF File D1275A PDF File

D1275A
D1275A

Overview
Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington For power amplification Complementary to 2SB0949 and 2SB0949A • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 16.
7±0.
3 0.
7±0.
1 www.
DataSheet4U.
com Unit: mm 10.
0±0.
2 5.
5±0.
2 4.
2±0.
2 2.
7±0.
2 7.
5±0.
2 ■ Features φ 3.
1±0.
1 4.
2±0.
2 Solder Dip (4.
0) 14.
0±0.
5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SD1275 2SD1275A VCEO VEBO IC ICP TC = 25°C PC Tj Tstg Symbol VCBO Rating 60 80 60 80 5 2 4 35 2.
0 150 −55 to +150 °C °C V A A W V Unit V 1.
4±0.
1 1.
3±0.
2 0.
5+0.
2 –0.
1 0.
8±0.
1 2.
54±0.
3 5.
08±0.
5 Collector-emitter voltage 2SD1275 (Base open) 2SD1275A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package Internal Connection C B ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SD1275 2SD1275A 2SD1275 2SD1275A IEBO hFE1 hFE2 * Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf ICEO 2SD1275 2SD1275A VBE ICBO VCE = 4 V, IC = 2 A VCB = 60 V, IE = 0 VCB = 80 V, IE = 0 VCE = 30 V, IB = 0 VCE = 40 V, IB = 0 VEB = 5 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 2 A IC = 2 A, IB = 8 mA VCE = 10 V, IC = 0.
5 A, f = 1 MHz IC = 2 A, IB1 = 8 mA, IB2 = −8 mA, VCC = 50 V 20 0.
5 4.
0 1.
0 1 000 1 000 Symbol VCEO Conditions IC = 30 mA, IB = 0 Min 60 80 Typ E Max Unit V 2.
8 1 1 2 2 2 V mA mA Emitter-base cutoff current (Collector open) Forward current transfer ratio mA  10 000 2.
5 V MHz µs µs µs Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 me...


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