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4953GM

Advanced Power Electronics
Part Number 4953GM
Manufacturer Advanced Power Electronics
Description AP4953GM
Published Apr 10, 2010
Detailed Description www.DataSheet4U.com AP4953GM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low ...
Datasheet PDF File 4953GM PDF File

4953GM
4953GM

Overview
www.
DataSheet4U.
com AP4953GM RoHS-compliant Product Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching D1 G2 S2 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 53mΩ -5A SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness.
The SO-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 30 +20 -5 -4 - 20 2 0.
016 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.
5 Unit ℃/W Data and specifications subject to change without notice 1 200810075 www.
DataSheet4U.
com AP4953GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-5A VGS=-4.
5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-30V, VGS=0V o Min.
-30 -1 - Typ.
5 8 1.
7 4.
5 6.
7 10 21 10 595 80 75 Max.
Units 53 90 -3 -1 -25 +100 15 952 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V VGS=+20V ID=-5A VDS=-15V VGS=-4.
5V VDS=-15V ID=-1A RG=3.
3Ω,VGS=-10V RD=15Ω VGS=0V VDS=-25V ...


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