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4953

Tuofeng Semiconductor
Part Number 4953
Manufacturer Tuofeng Semiconductor
Description Dual P-Channel MOSFET
Published Aug 28, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3td 4953 Dual 30V P-Channel PowerTrench® MOSFET General Description ...
Datasheet PDF File 4953 PDF File

4953
4953

Overview
Shenzhen Tuofeng Semiconductor Technology 4Co9.
,5L3td 4953 Dual 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.
5V – 25V).
Applications • Power management • Load switch • Battery protection Features • –5.
3 A, –30 V RDS(ON) = 59 mΩ @ VGS = –10 V RDS(ON) = 89 mΩ @ VGS = –4.
5 V • Low gate charge (6nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD1DD22D2 DD1 SO-8 Pin 1 SO-8 S2GG2 SS1GS1 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID PD PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1b) TJ, TSTG (Note 1c) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size 4953 4953 13’’ 5 6 Q1 7 Q2 8 4 3 2 1 Ratings –30 ±20 –5.
3 –20 2 1.
6 1 0.
9 –55 to +175 78 40 Tape width 12mm Units V V A W °C °C/W °C/W Quantity 2500 units Shenzhen Tuofeng Semiconductor Technology Co.
, L4t9d 53 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain–Source Breakdown Voltage ∆BV DSS ∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Gate–Body Leakage, Forward IGSSR Gate–Body Leakage, Reverse On Characteristics (Note 2) V GS(th) Gate Threshold Voltage ∆V GS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient VGS = 0 V, ID = –250 µA ID = –250...


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