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HYB39S16160CT-10

Siemens Semiconductor
Part Number HYB39S16160CT-10
Manufacturer Siemens Semiconductor
Description 16 MBit Synchronous DRAM
Published Apr 10, 2010
Detailed Description www.DataSheet4U.com 16 MBit Synchronous DRAM HYB 39S16400/800/160CT-8/-10 • High Performance: -8 -10 100 10 7 12 8 U...
Datasheet PDF File HYB39S16160CT-10 PDF File

HYB39S16160CT-10
HYB39S16160CT-10

Overview
www.
DataSheet4U.
com 16 MBit Synchronous DRAM HYB 39S16400/800/160CT-8/-10 • High Performance: -8 -10 100 10 7 12 8 Units MHz ns ns ns ns fCK(MAX.
) tCK3 tAC3 tCK2 tAC2 125 8 6 10 6 • Multiple Burst Read with Single Write Operation • Automatic and Controlled Precharge Command • Data Mask for Read/Write control • Dual Data Mask for byte control (× 16) • Auto Refresh (CBR) and Self Refresh • Suspend Mode and Power Down Mode • 4096 refresh cycles/64 ms • Random Column Address every CLK (1-N Rule) • Single 3.
3 V ± 0.
3 V Power Supply • LVTTL Interface • Plastic Packages: P-TSOPI-44 400mil width (× 4, × 8) P-TSOPII-50 400mil width (× 16 ) • -8 version for PC100 applications • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature • Dual Banks controlled by A11 ( Bank Select) • Programmable CAS Latency: 2, 3 • Programmable Wrap Sequence: Sequential or Interleave • Programmable Burst Length: 1, 2, 4, 8 • Full page (optional) for sequencial wrap around The HYB39S1640...


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