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HAT2200WP

Renesas Technology
Part Number HAT2200WP
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Apr 13, 2010
Detailed Description HAT2200WP Silicon N Channel Power MOS FET Power Switching Features  Capable of 8 V gate drive  Low drive current  Hig...
Datasheet PDF File HAT2200WP PDF File

HAT2200WP
HAT2200WP

Overview
HAT2200WP Silicon N Channel Power MOS FET Power Switching Features  Capable of 8 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 22 m typ.
(at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 4 321 G Preliminary Datasheet REJ03G1678-0311 Rev.
3.
11 Nov.
25.
2016 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tch = 25°C, Rg  50  3.
Tc = 25°C Symbol VDSS VGSS ID ID(pulse) Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 100 ±20 20 80 20 20 40 20 6.
25 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C/W °C °C REJ03G1678-0311 Rev.
3.
11 Nov.
25...


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