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HAT2200R

Renesas Technology
Part Number HAT2200R
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Apr 13, 2010
Detailed Description HAT2200R Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • Hig...
Datasheet PDF File HAT2200R PDF File

HAT2200R
HAT2200R

Overview
HAT2200R Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 22 mΩ typ.
(at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0232-0201Z Rev.
2.
01 Nov.
29.
2016 Rev.
2.
01, Nov.
29.
2016, page 1 of 7 HAT2200R Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 100 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 8 ID(pulse)Note1 64 Body-drain diode reverse drain current IDR 8 Avalanche current IAP Note 2 8 Avalanche energy EAR Note 2 6.
4 Channel dissipation Pch Note3 2.
5 Channel to Ambient Thermal Impedance θch-a Note3 50 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tch = 25°C, Rg ≥ 50 Ω 3.
When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW ≤ 10s Unit V V A A A...


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