DatasheetsPDF.com

MBR20H200CT

Taiwan Semiconductor Company
Part Number MBR20H200CT
Manufacturer Taiwan Semiconductor Company
Description 20.0 AMPS. Schottky Barrier Rectifiers
Published Apr 14, 2010
Detailed Description MBR20H100CT – MBR20H200CT www.DataSheet4U.com Pb RoHS COMPLIANCE 20.0 AMPS. Schottky Barrier Rectifiers TO-220AB Feat...
Datasheet PDF File MBR20H200CT PDF File

MBR20H200CT
MBR20H200CT


Overview
MBR20H100CT – MBR20H200CT www.
DataSheet4U.
com Pb RoHS COMPLIANCE 20.
0 AMPS.
Schottky Barrier Rectifiers TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in power supply – output rectification, power management, instrumentation Guardring for overvoltage protection High temperature soldering guaranteed: 260oC/10 seconds,0.
25”(6.
35mm)from case Mechanical Data — — — — — — Cases: JEDEC TO-220AB molded plastic body Terminals: Pure tin plated, lead free.
solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in.
- lbs.
max Weight: 0.
08 ounce, 2.
24 grams Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20% MBR Type Number Symbol 20H100CT Maximum Recurrent Peak Reverse Voltage VRRM 100 Maximum RMS Voltage VRMS 70 Maximum DC Blocking Voltage VDC 100 Maximum Average Forward Rectified Current O at Tc=125 C Peak Repetitive Forward Current (Rated VR, o Square Wave, 20KHz) at Tc=125 C Peak Forward Surge Current, 8.
3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at: o (Note 2) IF=10A, TC=25 C o IF=10A, TC=125 C o IF=20A, TC=25 C o IF=20A, TC=125 C Maximum Instantaneous Reverse Current o @ Tc =25 C at Rated DC Blocking Voltage o @ Tc=125 C (Note 2) Voltage Rate of Change (Rated VR) Maximum Typical Thermal Resistance (Note 3) MBR 20H150CT 150 105 150 20 20 150 MBR Units 20H200CT 200 V 140 V 200 V A A A 0.
5 A V I(AV) IFRM IFSM IRRM VF 0.
85 0.
75 0.
95 0.
85 1.
0 0.
88 0.
75 0.
97 0.
85 IR dV/dt RθJC 5 2.
0 10,000 1.
5 uA mA V/uS o C/W o Operating Jun...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)