DatasheetsPDF.com

MBR20H200CT

Vishay Siliconix
Part Number MBR20H200CT
Manufacturer Vishay Siliconix
Description Dual Common-Cathode High-Voltage Schottky Rectifier
Published Apr 14, 2010
Detailed Description MBR20H200CT, MBRF20H200CT & SB20H200CT-1 www.DataSheet4U.com Vishay General Semiconductor Dual Common-Cathode High-Volt...
Datasheet PDF File MBR20H200CT PDF File

MBR20H200CT
MBR20H200CT


Overview
MBR20H200CT, MBRF20H200CT & SB20H200CT-1 www.
DataSheet4U.
com Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.
0 µA TO-220AB ITO-220AB FEATURES • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High frequency operation 1 2 3 1 2 3 • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling and polarity protection applications.
MBR20H200CT TO-262AA MBRF20H200CT 1 2 3 SB20H200CT-1 PIN 1 PIN 3 PIN 2 CASE MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Mounting Torque: 10 in-lbs maximum Polarity: As marked PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ 2 x 10 A 200 V 290 A 0.
75 V 175 °C MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current total device per diode SYMBOL VRRM VRWM VDC IF(AV) IFSM IRRM ERSM EAS VC dV/dt TJ, TSTG VAC MBR20H200CT 200 200 200 20 10 290 1.
0 20 20 25 10 000 - 65 to + 175 1500 UNIT V V V A A A mJ mJ kV V/µs °C V www.
vishay.
com 1 Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz Peak non-repetitive reverse surge energy per diode (8/20 µs waveform) Non-repetitive avalanche energy per diode at 25 °C, IAS = 2.
0 A, L = 10 mH Electrostatic discharge capacitor voltage human body model air discharge: C = 100 pF, R 0 1.
5 kΩ Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 minute Document Number: 88786 R...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)