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IS41LV16100

Integrated Silicon Solution
Part Number IS41LV16100
Manufacturer Integrated Silicon Solution
Description 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Published Apr 22, 2010
Detailed Description IS41C16100 IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • TTL compatible inputs and outputs; tr...
Datasheet PDF File IS41LV16100 PDF File

IS41LV16100
IS41LV16100

Overview
IS41C16100 IS41LV16100 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: — Auto refresh Mode: 1,024 cycles /16 ms — RAS-Only, CAS-before-RAS (CBR), and Hidden — Self refresh Mode - 1,024 cycles / 128ms • JEDEC standard pinout • Single power supply: — 5V ± 10% (IS41C16100) — 3.
3V ± 10% (IS41LV16100) • Byte Write and Byte Read operation via two CAS • Industrail Temperature Range -40oC to 85oC • Lead-free available www.
DataSheet4U.
com ISSI December 2005 ® DESCRIPTION The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.
These devices offer an accelerated cycle access called EDO Page Mode.
EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.
The Byte Write control, of upper and lower byte, makes the IS41C16100 ideal for use in 16-bit and 32-bit wide data bus systems.
These features ma...


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