DatasheetsPDF.com

IS41LV16100S

Integrated Silicon Solution
Part Number IS41LV16100S
Manufacturer Integrated Silicon Solution
Description 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Published Apr 22, 2010
Detailed Description IS41C16100S IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • Extended Data-Out (EDO) Page Mode a...
Datasheet PDF File IS41LV16100S PDF File

IS41LV16100S
IS41LV16100S

Overview
IS41C16100S IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms • JEDEC standard pinout • Single power supply: 5V ± 10% (IS41C16100S) 3.
3V ± 10% (IS41LV16100S) • Byte Write and Byte Read operation via two CAS • Industrail Temperature Range -40°C to 85°C www.
DataSheet4U.
com DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.
These devices offer an accelerated cycle access called EDO Page Mode.
EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.
The Byte Write control, of upper and lower byte, makes the IS41C16100S ideal for use in 16-, 32-bit wide data bus systems.
These features make the IS4...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)