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CMT60N06

Champion Microelectronic
Part Number CMT60N06
Manufacturer Champion Microelectronic
Description N-CHANNEL Logic Level Power MOSFET
Published May 24, 2010
Detailed Description CMT60N06 N-CHANNEL Logic Level Power MOSFET APPLICATION DC motor control UPS Class D Amplifier VDSS 60V RDS(ON) Typ. 15....
Datasheet PDF File CMT60N06 PDF File

CMT60N06
CMT60N06

Overview
CMT60N06 N-CHANNEL Logic Level Power MOSFET APPLICATION DC motor control UPS Class D Amplifier VDSS 60V RDS(ON) Typ.
15.
8mΩ ID 60A FEATURES Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves PIN CONFIGURATION TO-220 SYMBOL D Front View www.
DataSheet4U.
com GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current ¡Ð ¡Ð ¡Ð Continuous Tc = 25¢J , VGS@10V Continuous Tc = 100¢J , VGS@10V Pulsed Tc = 25¢J , VGS@10V (Note 2) Continue Symbol VDSS ID ID IDM VGS PD dv/dt TJ, TSTG EAS TL TPKG IAS Value 60 60 43 241 ±20 150 1.
0 4.
5 -55 to 175 500 300 260 60 V W W/¢J V/ns ¢J mJ ¢J ¢J A Unit V A Gate-to-Source Voltage ¡Ð Total Power Dissipation Derating Factor above 25¢J Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy L=144µH,ID=40 Amps Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Pulsed Avalanche Rating THERMAL RESISTANCE Symbol RθJC RθJA Parameter Junction-to-case Junction-to-ambient Min Typ Max 1.
0 62 Units ¢J /W ¢J /W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175¢J 1 cubic foot chamber, free air 2004/05/28 Preliminary rev.
0.
1 Champion Microelectronic Corporation Page 1 CMT60N06 N-CHANNEL Logic Level Power MOSFET ORDERING INFORMATION Part Number CMT60N06 Package TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25¢J .
CMT60N06 Characteristic OFF Characteristics Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 µA) Breakdown Voltage Temperature Coefficient www.
DataSheet4U.
com (Reference to 25¢J , ID = 250 µA) Drain-to-Source Leakage Current (VDS = 60 V, VGS = 0 V, TJ = 25¢J ) (VDS = 48 V, VGS = 0 V, TJ = 150¢J ) Gate-to-Source Forward Leakage (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics Gate Threshold Voltage (VDS = VGS, ID = 250 µA) Static Drain-to-...


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