DatasheetsPDF.com

CMT60N06G

Champion Microelectronic
Part Number CMT60N06G
Manufacturer Champion Microelectronic
Description N-CHANNEL Logic Level Power MOSFET
Published May 24, 2010
Detailed Description CMT60N06G N-CHANNEL Logic Level Power MOSFET APPLICATION ‹ ‹ ‹ DC motor control UPS Class D Amplifier VDSS 60V RDS(ON) T...
Datasheet PDF File CMT60N06G PDF File

CMT60N06G
CMT60N06G

Overview
CMT60N06G N-CHANNEL Logic Level Power MOSFET APPLICATION ‹ ‹ ‹ DC motor control UPS Class D Amplifier VDSS 60V RDS(ON) Typ.
15.
8mΩ ID 60A FEATURES ‹ ‹ ‹ ‹ Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves PIN CONFIGURATION TO-220 SYMBOL D Front View www.
DataSheet4U.
com GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current － Continuous Tc = 25℃, VGS@10V － Continuous Tc = 100℃, VGS@10V － Pulsed Tc = 25℃, VGS@10V (Note 2) Gate-to-Source Voltage － Continue Total Power Dissipation Derating Factor above 25℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy L=144μH,ID=40 Amps Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Pulsed Avalanche Rating dv/dt TJ, TSTG EAS TL TPKG IAS Symbol VDSS ID ID IDM VGS PD Value 60 60 43 241 ±20 150 1.
0 4.
5 -55 to 175 500 300 260 60 V W W/℃ V/ns ℃ mJ ℃ ℃ A Unit V A THERMAL RESISTANCE Symbol RθJC RθJA Parameter Junction-to-case Junction-to-ambient Min Typ Max 1.
0 62 Units ℃/W ℃/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175℃ 1 cubic foot chamber, free air 2006/03/07 Rev 1.
1 Champion Microelectronic Corporation Page 1 CMT60N06G N-CHANNEL Logic Level Power MOSFET ORDERING INFORMATION Part Number CMT60N06G Package TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃.
CMT60N06G Characteristic OFF Characteristics Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) Breakdown Voltage Temperature Coefficient www.
DataSheet4U.
com (Reference to 25℃, ID = 250 μA) Drain-to-Source Leakage Current (VDS = 60 V, VGS = 0 V, TJ = 25℃) (VDS = 48 V, VGS = 0 V, TJ = 150℃) Gate-to-Source Forward Leakage (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics Gate Threshold Voltage (VDS = VGS, ID = 250 μA) Static Drain-to-Source On-Resistance (V...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)